THE NEXT GENERATION
SiC∙S 12i
SiC∙S 12i is a new-generation of PVT furnaces designed for consistent, scalable silicon carbide crystal growth. With precise temperature and pressure control, stable long-duration operation, and support for up to 12-inch ingots, it provides a future-proof platform for industrial production.
KEY FEATURES
Modular reactor design, available in 8” and 12” versions
RF generator and process pump fully integrated inside the cabinet
Simple installation, no external control cabinet or wiring
Utilities can be connected from top and/or bottom
Automated pyrometer alignment via image analysis (no operator input required)
Improved energy efficiency
TECHNICAL DATA
Chamber size: OD ≤ 550 mm
Width: 1200 mm
Depth: 2100 mm
Height: 2600 mm
Weight: app. 1200 kg
RF generator: 50 kW, 5–15 kHz
Temperature range: ≤ 2400 °C
Pressure control range: 1000-1 mbar
oPTIONS
Additional temperature measurement
Enhanced vacuum performance
Expanded gas handling
Movable RF-coil
Crucible rotation
In situ RGA for improved monitoring and process control
Active control of temperature gradients