SILICON CARBIDE SINGLE CRYSTAL
BULK GROWTH
Silicon carbide boules are produced through PVT, the industrially established method for growing high-quality SiC single crystals. The growth outcome is governed by a complex interplay of temperature gradients, pressure regimes and vapor transport dynamics, all of which directly influence crystal quality, defect density and growth stability.
Variations in any of these parameters can affect polytype stability, defect formation and stress development within the growing SiC boule. Maintaining stable and reproducible conditions throughout the entire growth cycle is therefore essential for producing high-quality SiC crystal at an industrial scale.
SiC∙S furnaces are engineered to enable stable operation and tightly controlled process conditions over long process cycles, typically weeks, to grow SiC boules. The process-driven furnace design supports consistent crystal quality and scalability towards larger boules and wafer formats- forming a robust foundation for industrial SiC manufacturing.