ENGINEERING FOR THE FUTURE OF
POWER ELECTRONICS
SiC∙S builds on a long heritage of silicon carbide process equipment development. The company is rooted in early industrial SiC initiatives and pioneering R&D collaborations with leading Swedish research groups.
This work has spanned MOCVD epi-ractors as well as HTCVD and PVT systems for crystal bulk growth, forming the foundation of todays engineering expertise. Among delivered solutions are fully automated production sites featuring PVT reactors combined with graphite handling systems for storage and robotic loading and unloading of crucibles operating 24/7.
Integrated software supports recipe management, process data logging and crucible ID tracking- enabling controlled, traceable and repeatable SiC crystal manufacturing at scale.
Together this combination of robust engineering and industrial automation positions SiC∙S to enable the next generation of silicon carbide manufacturing- supporting the global transition toward more efficient and sustainable power electronic.